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| BCR112... NPN Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor (R1=4.7k, R2=4.7k) * For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR112/F/L3 BCR112T/W C 3 BCR112U C1 6 B2 5 E2 4 R1 R1 R2 TR2 R1 R2 TR1 R2 1 B 2 E EHA07184 1 E1 2 B1 3 C2 EHA07174 Type Marking Pin Configuration Package BCR112 BCR112F BCR112L3 BCR112T BCR112U BCR112W WFs WFs WF WFs WFs WFs 1=B 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C - - - SOT23 TSFP-3 TSLP-3-4 SC75 SOT323 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 1 Aug-29-2003 BCR112... Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR112, TS 102C BCR112F, TS 128C BCR112L3, TS 135C BCR112T, TS 109C BCR112U, TS 118C BCR112W, TS 124C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR112 BCR112F BCR112L3 BCR112T BCR112U BCR112W 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 10 15 100 200 250 250 250 250 250 150 -65 ... 150 Value 240 90 60 165 133 105 Unit V mA mW Tj Tstg Symbol RthJS C Unit K/W 2 Aug-29-2003 BCR112... Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 A, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2 50 20 0.8 1 3.2 0.9 - 4.7 1 140 3 100 1.61 0.3 1.5 2.5 6.2 1.1 k Collector-base cutoff current VCB = 40 V, IE = 0 nA mA V Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 A, VCE = 5 V Input on voltage IC = 2 mA, VCE = 0.3 V Input resistor Resistor ratio AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1Pulse test: t < 300s; D < 2% MHz pF fT Ccb 3 Aug-29-2003 BCR112... DC current gain hFE = (IC) VCE = 5 V (common emitter configuration) 10 3 - Collector-emitter saturation voltage VCEsat = (IC), hFE = 20 10 2 10 2 mA h FE 10 1 IC 10 1 10 0 10 -1 -1 10 0 1 2 10 10 10 mA 10 3 10 0 0 0.1 0.2 0.3 V 0.5 IC VCEsat Input on Voltage Vi(on) = (I C) VCE = 0.3V (common emitter configuration) 10 3 mA Input off voltage V i(off) = (IC) VCE = 5V (common emitter configuration) 10 1 mA 10 2 10 0 IC 10 1 IC 10 -1 10 0 10 -1 0 10 1 10 V 10 2 10 -2 1 1.2 1.4 1.6 V 2 Vi(on) Vi(off) 4 Aug-29-2003 BCR112... Total power dissipation Ptot = (TS) BCR112 300 Total power dissipation Ptot = (TS) BCR112F 300 mW mW P tot 150 P tot 120 C 200 200 150 100 100 50 50 0 0 20 40 60 80 100 150 0 0 20 40 60 80 100 120 C 150 TS TS Total power dissipation Ptot = (TS) BCR112L3 300 Total power dissipation Ptot = (TS) BCR112T 300 mW mW Ptot 150 Ptot 120 C 200 200 150 100 100 50 50 0 0 20 40 60 80 100 150 0 0 20 40 60 80 100 120 C 150 TS TS 5 Aug-29-2003 BCR112... Total power dissipation Ptot = (TS) BCR112U 300 Total power dissipation Ptot = (TS) BCR112W 300 mW mW P tot 150 P tot 120 C 200 200 150 100 100 50 50 0 0 20 40 60 80 100 150 0 0 20 40 60 80 100 120 C 150 TS TS Permissible Pulse Load RthJS = (tp ) BCR112 10 K/W 3 Permissible Pulse Load Ptotmax/P totDC = (tp) BCR112 10 3 10 2 Ptotmax / PtotDC - 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 6 Aug-29-2003 BCR112... Permissible Puls Load RthJS = (tp) BCR112F 10 2 Permissible Pulse Load Ptotmax/P totDC = (tp) BCR112F 10 3 10 1 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 P totmax/P totDC K/W RthJS 10 2 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Permissible Puls Load RthJS = (tp) BCR112L3 10 2 Permissible Pulse Load Ptotmax/P totDC = (tp) BCR112L3 10 3 Ptotmax/ PtotDC 10 1 10 2 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 7 Aug-29-2003 BCR112... Permissible Puls Load RthJS = (tp) BCR112T 10 K/W 3 Permissible Pulse Load Ptotmax/P totDC = (tp) BCR112T 10 3 10 2 P totmax / P totDC 10 2 10 1 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Permissible Puls Load RthJS = (tp) BCR112U 10 K/W 3 Permissible Pulse Load Ptotmax/P totDC = (tp) BCR112U 10 3 Ptotmax / PtotDC 10 2 10 2 10 1 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 8 Aug-29-2003 BCR112... Permissible Puls Load RthJS = (tp) BCR112W 10 K/W 3 Permissible Pulse Load Ptotmax/P totDC = (tp) BCR112W 10 3 10 2 P totmax / P totDC - 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 R thJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 9 Aug-29-2003 |
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